Beta

⌘K

Product thumbnail image

Discrete Semiconductor Products

RX3P12BATC16

Active

Rohm Semiconductor

TRANS MOSFET P-CH 100V 120A 3-PIN(3+TAB) TO-220AB TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAnti-Whisker formation - Transistors How to Use LTspice® Models: Tips for Improving Convergence +38

Product thumbnail image

Discrete Semiconductor Products

RX3P12BATC16

Active

Rohm Semiconductor

TRANS MOSFET P-CH 100V 120A 3-PIN(3+TAB) TO-220AB TUBE

Deep-Dive with AI

DocumentsAnti-Whisker formation - Transistors How to Use LTspice® Models: Tips for Improving Convergence +38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RX3P12BATC16

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	385 nC
Input Capacitance (Ciss) (Max) @ Vds	16600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	201 W
Rds On (Max) @ Id, Vgs	12.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	364	$ 6.75
Newark	Each	1	$ 7.87
		10	$ 7.45
		25	$ 4.51
		50	$ 4.34
		100	$ 4.15
		250	$ 3.86
		500	$ 3.56

Description

General part information

RX3P12BAT Series

RX3P12BAT is a low on-resistance power MOSFET suitable for switching applications.

Documents

Technical documentation and resources

Anti-Whisker formation - Transistors

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Measurement Method and Usage of Thermal Resistance RthJC

PCB Layout Thermal Design Guide

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Report of SVHC under REACH Regulation

Environmental Data

Types and Features of Transistors

Application Note

RX3P12BAT ESD Data

Characteristics Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Notes for Temperature Measurement Using Thermocouples

What Is Thermal Design

About Export Regulations

Export Information

Condition of Soldering / Land Pattern Reference

Package Information

Notes for Calculating Power Consumption:Static Operation

About Flammability of Materials

Environmental Data

Two-Resistor Model for Thermal Simulation

TO-220AB Dimension

Package Information

TO-220AB Explanation for Marking

Package Information

P-channel Power MOSFETs selection guide

Technical Article

TO-220AB Packing Information

Package Information

Part Explanation

Application Note

TO-220AB Inner Structure

Package Information

Precautions When Measuring the Rear of the Package with a Thermocouple

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

How to Use LTspice® Models

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

TO-220AB Reliability Test Result

Manufacturing Data

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

Compliance of the RoHS directive

Environmental Data

What is a Thermal Model? (Transistor)

RX3P12BAT Data Sheet

Notes for Temperature Measurement Using Forward Voltage of PN Junction

List of Transistor Package Thermal Resistance

RX3P12BAT Series

Pch -100V -120A Power MOSFET

Part	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Rohm Semiconductor RX3P12BATC16	201 W	P-Channel	12.3 mOhm	16600 pF	TO-220AB	385 nC	20 V	150 °C	Through Hole	100 V	MOSFET (Metal Oxide)	6 V 10 V	120 A	TO-220-3