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TO252-3
Discrete Semiconductor Products

IRLR2905TRLPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 27 MOHM;

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TO252-3
Discrete Semiconductor Products

IRLR2905TRLPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 27 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLR2905TRLPBF
Current - Continuous Drain (Id) @ 25°C42 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs27 mOhm
Supplier Device PackageTO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
NewarkEach (Supplied on Full Reel) 3000$ 0.94
6000$ 0.83
12000$ 0.73
18000$ 0.69
30000$ 0.65

Description

General part information

IRLR2905 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.