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BC54-10PA,115
Discrete Semiconductor Products

BC54-10PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 45 V, 1 A NPN MEDIUM POWER TRANSISTORS

BC54-10PA,115
Discrete Semiconductor Products

BC54-10PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 45 V, 1 A NPN MEDIUM POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBC54-10PA,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]63
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]420 mW
QualificationAEC-Q100
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.11
33000$ 0.11
47948$ 0.17
MouserN/A 1$ 0.41
10$ 0.41
100$ 0.40
1000$ 0.24
3000$ 0.08
9000$ 0.07
24000$ 0.06
99000$ 0.06

Description

General part information

BC54-10PA Series

NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.