Discrete Semiconductor Products
MJPE32CZ
ActiveNexperia USA Inc.
100 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR
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Discrete Semiconductor Products
MJPE32CZ
ActiveNexperia USA Inc.
100 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJPE32CZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 |
| Frequency - Transition | 105 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Power - Max [Max] | 1.6 W |
| Supplier Device Package | CFP15B |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.13 | |
Description
General part information
MJPE32C Series
PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources