Specification	BUK9M23-80EX

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2808 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	79 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

BUK9M23-80E Series

N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Qualification	Grade	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Nexperia USA Inc. BUK9M23-80EX	10 V	20 mOhm	2.1 V	5 V	LFPAK33	AEC-Q101	Automotive	2808 pF	N-Channel	79 W	80 V	MOSFET (Metal Oxide)	37 A	175 °C	-55 °C	20 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2655	$ 1.77

Description

General part information

BUK9M23-80E Series

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.