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HSOP8

Discrete Semiconductor Products

RS6N120BHTB1

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Rohm Semiconductor

MOSFET, N-CH, 80V, 135A, HSOP ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheet HSOP8(TB1) Dimension +26

HSOP8

Discrete Semiconductor Products

RS6N120BHTB1

Active

Rohm Semiconductor

MOSFET, N-CH, 80V, 135A, HSOP ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet HSOP8(TB1) Dimension +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RS6N120BHTB1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3420 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.83
		10	$ 2.35
		100	$ 1.87
		500	$ 1.58
		1000	$ 1.34
	Digi-Reel®	1	$ 2.83
		10	$ 2.35
		100	$ 1.87
		500	$ 1.58
		1000	$ 1.34
	Tape & Reel (TR)	2500	$ 1.27
		5000	$ 1.23
Newark	Each (Supplied on Cut Tape)	1	$ 3.41
		10	$ 2.45
		25	$ 2.22
		50	$ 1.97
		100	$ 1.73
		250	$ 1.57
		500	$ 1.41
		1000	$ 1.31

Description

General part information

RS6N120BH Series

RS6N120BH is a power MOSFET with low-on resistance and high power package, suitable for switching.

Documents

Technical documentation and resources

Datasheet

HSOP8(TB1) Dimension

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Part Explanation

Application Note

PCB Layout Thermal Design Guide

List of Transistor Package Thermal Resistance

Two-Resistor Model for Thermal Simulation

About Export Regulations

Export Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

What is a Thermal Model? (Transistor)

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Taping Information

Package Information

RS6N120BH ESD Data

Characteristics Data

Moisture Sensitivity Level - Transistors

Package Information

HSOP8(TB1) Taping Information

Package Information

Report of SVHC under REACH Regulation

Environmental Data

About Flammability of Materials

Environmental Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

HSOP8 Cu CRIP Inner Structure

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

HSOP8(TB1) Explanation for Marking

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

What Is Thermal Design

Notes for Temperature Measurement Using Thermocouples

Types and Features of Transistors

Application Note

RS6N120BH Series

Nch 80V 135A, HSOP8, Power MOSFET

Part	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Technology
Rohm Semiconductor RS6N120BHTB1	150 °C	80 V	8-HSOP	Surface Mount	8-PowerTDFN	3420 pF	4.9 mOhm	53 nC	20 V	120 A	6 V 10 V	N-Channel	104 W	MOSFET (Metal Oxide)