Discrete Semiconductor Products

VS-6F100

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DIODE GEN PURP 1KV 6A DO203AA

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 6A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-6F100

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	12 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Current - Average Rectified (Io)	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-6F100M	Standard Recovery >500ns	200 mA	6 A	Standard	Chassis Stud Mount	1000 V	DO-203AA DO-4 Stud	DO-203AA	DO-4	175 ░C	-65 C	1.1 V
Vishay General Semiconductor - Diodes Division VS-6F100	Standard Recovery >500ns	200 mA	6 A	Standard	Chassis Stud Mount	1000 V	DO-203AA DO-4 Stud	DO-203AA	DO-4	175 ░C	-65 C	1.1 V	12 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 4.78

General part information

Diode 1000 V 6A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources