Discrete Semiconductor Products
RA1C030LDT5CL
ActiveRohm Semiconductor
MOSFET, N-CH, 20V, 3A, DSN1006 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RA1C030LDT5CL
ActiveRohm Semiconductor
MOSFET, N-CH, 20V, 3A, DSN1006 ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | RA1C030LDT5CL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs | 140 mOhm |
| Supplier Device Package | DSN1006-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 7 V |
| Vgs (Max) [Min] | -2 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RA1C030LD Series
RA1C030LD is a WLCSP MOSFET with low-on resistance and High power package, suitable for Switching circuits, Single-Cell Battery Applications, Mobile Applications.
Documents
Technical documentation and resources