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TO-220AB PKG
Discrete Semiconductor Products

IRFB4020PBF

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INFINEON

MOSFET TRANSISTOR, N CHANNEL, 18 A, 200 V, 100 MOHM, 10 V, 4.9 V ROHS COMPLIANT: YES

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TO-220AB PKG
Discrete Semiconductor Products

IRFB4020PBF

Active
INFINEON

MOSFET TRANSISTOR, N CHANNEL, 18 A, 200 V, 100 MOHM, 10 V, 4.9 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4020PBF
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29 nC
Input Capacitance (Ciss) (Max) @ Vds1200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)100 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6868$ 1.66
Tube 1$ 1.88
10$ 1.22
100$ 0.83
500$ 0.78
NewarkEach 1$ 1.69
10$ 1.39
100$ 0.78
500$ 0.64
1000$ 0.61

Description

General part information

IRFB4020 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources