Discrete Semiconductor Products

MCU18P10YHE3-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MCU18P10YHE3-TP

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1051 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	72 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	110 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Qualification	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	FET Type
MCC (Micro Commercial Components) MCU18P10YHE3-TP	Automotive	-55 C	150 °C	TO-252 (DPAK)	AEC-Q101	18 A	4.5 V 10 V	20.1 nC	1051 pF	20 V	110 mOhm	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	2.5 V	Surface Mount	72 W	P-Channel
MCC (Micro Commercial Components) MCU18P10YHE3-TP		-55 C	150 °C	TO-252 (DPAK)		18 A	4.5 V 10 V	20.1 nC	1051 pF	20 V	110 mOhm	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	2.5 V	Surface Mount	72 W	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 18A (Tc) 72W Surface Mount TO-252 (DPAK)

Technical documentation and resources