Discrete Semiconductor Products

VI30200C-E3/4W

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DIODE ARR SCHOT 200V 15A TO262AA

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Discrete Semiconductor Products

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DIODE ARR SCHOT 200V 15A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VI30200C-E3/4W

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	160 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	500 ns, 200 mA
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Mounting Type	Diode Configuration
Vishay General Semiconductor - Diodes Division VI30200C-E3/4W	15 A	-40 °C	150 °C	200 mA 500 ns	1.1 V	200 V	I2PAK TO-262-3 Long Leads TO-262AA	160 µA	Schottky	TO-262AA	Through Hole	1 Pair Common Cathode

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General part information

Diode Array 1 Pair Common Cathode 200 V 15A Through Hole TO-262-3 Long Leads, I2PAK, TO-262AA

Technical documentation and resources