Discrete Semiconductor Products

SI7483ADP-T1-E3

Obsolete

MOSFET P-CH 30V 14A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 14A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7483ADP-T1-E3

Current - Continuous Drain (Id) (Ta)	14 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	180 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	5.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Package / Case	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs(th) (Max)
Vishay Dale SI7483ADP-T1-E3	MOSFET (Metal Oxide)	30 V	Surface Mount	20 V	1.9 W	5.7 mOhm	PowerPAK® SO-8	PowerPAK® SO-8	180 nC	14 A	-55 °C	150 °C	10 V	4.5 V	P-Channel	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 30 V 14A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available