Discrete Semiconductor Products

SIJ400DP-T1-GE3

Obsolete

MOSFET N-CH 30V 32A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 32A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ400DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	7765 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	69.4 W, 5 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Mounting Type	FET Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max)
Vishay Dale SIJ400DP-T1-GE3	10 V	4.5 V	4 mOhm	30 V	MOSFET (Metal Oxide)	20 V	Surface Mount	N-Channel	PowerPAK® SO-8	-55 °C	150 °C	32 A	150 nC	7765 pF	PowerPAK® SO-8	5 W 69.4 W	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 32A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available