Specification	SSM6P816R,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	16.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1030 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	30.1 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6P816R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -6 A, 0.0301 Ω@4.5V, TSOP6F

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Power - Max [Max]	FET Feature	FET Feature	Package / Case	Mounting Type
Toshiba Semiconductor and Storage SSM6P816R,LF	20 V	16.6 nC	30.1 mOhm	1 V	6-TSOP-F	6 A	150 °C	MOSFET (Metal Oxide)	1030 pF	2 P-Channel (Dual)	1.4 W	1.8 V	Logic Level Gate	6-SMD Flat Leads	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.76

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -6 A, 0.0301 Ω@4.5V, TSOP6F

Technical documentation and resources