Discrete Semiconductor Products

MBR5U100HHE3-TP

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 5A, 100V V(RRM), SILICON, TO-277,

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Discrete Semiconductor Products

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 5A, 100V V(RRM), SILICON, TO-277,

Technical Specifications

Parameters and characteristics for this part

Specification	MBR5U100HHE3-TP

Capacitance @ Vr, F	320 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-277
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Mounting Type
Micro Commercial Components MBR5U100HHE3-TP	Schottky	200 mA 500 ns	100 V	10 µA	TO-277	175 ░C	-55 C	Automotive	AEC-Q101	320 pF	800 mV	5 A	3-PowerDFN TO-277	Surface Mount
Micro Commercial Components MBR5U100-TP	Schottky	200 mA 500 ns	100 V	100 µA	TO-277	150 °C	-55 °C				510 mV	5 A	3-PowerDFN TO-277	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 5A Surface Mount TO-277

Technical documentation and resources