Discrete Semiconductor Products

R5013ANJTL

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MOSFET N-CH 500V 13A LPTS

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Discrete Semiconductor Products

Active

MOSFET N-CH 500V 13A LPTS

Technical Specifications

Parameters and characteristics for this part

Specification	R5013ANJTL

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type
Rohm Semiconductor R5013ANJTL	100 W	MOSFET (Metal Oxide)	35 nC	10 V	LPTS	30 V	1300 pF	380 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	4.5 V	500 V	150 °C	13 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 13A (Ta) 100W (Tc) Surface Mount LPTS

Technical documentation and resources

No documents available