Discrete Semiconductor Products

2SC3332S-AA

Obsolete

TRANS NPN 160V 0.7A 3NP

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Discrete Semiconductor Products

Obsolete

TRANS NPN 160V 0.7A 3NP

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3332S-AA

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	700 mW
Supplier Device Package	3-NP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor 2SC3332S-AA	TO-226-3 TO-92-3	160 V	400 mV	100 nA	NPN	120 MHz	700 mA	Through Hole	150 °C	100 hFE	700 mW	3-NP
ON Semiconductor 2SC3332S	TO-226-3 TO-92-3	160 V		100 nA	NPN	120 MHz	700 mA	Through Hole	150 °C	140	700 mW	3-NP	400 mV
ON Semiconductor 2SC3332T	TO-226-3 TO-92-3	160 V		100 nA	NPN	120 MHz	700 mA	Through Hole	150 °C		700 mW	3-NP	400 mV	200 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 160 V 700 mA 120MHz 700 mW Through Hole 3-NP

Technical documentation and resources