Discrete Semiconductor Products

SQ4840EY-T1_GE3

Obsolete

MOSFET N-CH 40V 20.7A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 20.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4840EY-T1_GE3

Current - Continuous Drain (Id) @ 25°C	20.7 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	FET Type	Vgs (Max)	Grade	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQ4840EY-T1_GE3	40 V	-55 °C	175 ░C	9 mOhm	62 nC	AEC-Q101	20.7 A	MOSFET (Metal Oxide)	7.1 W	N-Channel	20 V	Automotive	8-SOIC	3.9 mm	0.154 in	2.5 V	2440 pF	8-SOIC	Surface Mount	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

Technical documentation and resources