Discrete Semiconductor Products

SQ4840EY-T1_GE3

Obsolete

MOSFET N-CH 40V 20.7A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 20.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4840EY-T1_GE3

Current - Continuous Drain (Id) (Tc)	20.7 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	62 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	7.1 W
Qualification	AEC-Q101
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Power Dissipation (Max)	Rds On (Max)	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Mounting Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Grade	Input Capacitance (Ciss) (Max)	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Length	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SQ4840EY-T1_BE3	7.1 W	9 mOhm	MOSFET (Metal Oxide)	2.5 V	20.7 A	N-Channel	Surface Mount	8-SOIC	-55 °C	175 °C	20 V	Automotive	2440 pF	AEC-Q101	40 V	62 nC	0.154 in	3.9 mm	10 V	4.5 V
Vishay Dale SQ4840EY-T1_GE3	7.1 W	9 mOhm	MOSFET (Metal Oxide)	2.5 V	20.7 A	N-Channel	Surface Mount	8-SOIC	-55 °C	175 °C	20 V	Automotive	2440 pF	AEC-Q101	40 V	62 nC	0.154 in	3.9 mm	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 40 V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

Technical documentation and resources