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ONSONS2SJ661-1E
Discrete Semiconductor Products

IRLU3636PBF

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INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;

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ONSONS2SJ661-1E
Discrete Semiconductor Products

IRLU3636PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLU3636PBF
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC
Input Capacitance (Ciss) (Max) @ Vds3779 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)143 W
Rds On (Max) @ Id, Vgs6.8 mOhm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 278$ 1.08
278$ 1.08
N/A 0$ 1.01
0$ 1.01
533$ 1.59
533$ 1.59

Description

General part information

IRLU3636 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.