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PSMN3R0-30YL,115
Discrete Semiconductor Products

PSMN3R0-30YL,115

NRND
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 100A 5-PIN(4+TAB) LFPAK T/R

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PSMN3R0-30YL,115
Discrete Semiconductor Products

PSMN3R0-30YL,115

NRND
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 100A 5-PIN(4+TAB) LFPAK T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN3R0-30YL,115
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45.8 nC
Input Capacitance (Ciss) (Max) @ Vds2822 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)81 W
Rds On (Max) @ Id, Vgs3 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 40869$ 2.26

Description

General part information

PSMN3R0-30YL Series

N-channel 30 V 3 mΩ logic level MOSFET in LFPAK