
Discrete Semiconductor Products
IPB120N10S403ATMA1
ActiveINFINEON
INFINEON’S IPB120N10S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
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Discrete Semiconductor Products
IPB120N10S403ATMA1
ActiveINFINEON
INFINEON’S IPB120N10S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB120N10S403ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 140 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 10120 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 250 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
| Part | Technology | Grade | Qualification | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs (Max) [Min] | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 80 V | 179 W | 4.1 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 6450 pF | 20 V | 120 A | Surface Mount | 95 nC | N-Channel | 4 V | 175 °C | -55 °C | 10 V | ||||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 40 V | 188 W | 1.5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 120 A | Surface Mount | N-Channel | 4 V | 175 °C | -55 °C | 10 V | 14000 pF | 176 nC | ||||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 80 V | 2.5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 120 A | Surface Mount | 167 nC | N-Channel | 4 V | 175 °C | -55 °C | 10 V | 11550 pF | PG-TO263-3-2 | 278 W | |||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 100 V | 250 W | 3.5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 120 A | Surface Mount | N-Channel | 3.5 V | 175 °C | -55 °C | 10 V | 10120 pF | 140 nC | ||||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 40 V | 136 W | 3.5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 120 A | Surface Mount | 205 nC | P-Channel | 4 V | 175 °C | -55 °C | 10 V | 14790 pF | ||||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 40 V | 136 W | 3.8 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 120 A | Surface Mount | 205 nC | P-Channel | 4 V | 175 °C | -55 °C | 14790 pF | PG-TO263-3-2 | ||||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 60 V | 250 W | 2.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 21900 pF | 20 V | 120 A | Surface Mount | N-Channel | 4 V | 175 °C | -55 °C | 10 V | 270 nC | PG-TO263-3-2 | |||||
INFINEON | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | 40 V | 1.7 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 120 A | Surface Mount | N-Channel | 2.2 V | 175 °C | -55 °C | 4.5 V 10 V | 14560 pF | 190 nC | 158 W | -16 V | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB120 Series
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Documents
Technical documentation and resources