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IPP330P10NMAKSA1
Discrete Semiconductor Products

IPP330P10NMAKSA1

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INFINEON

IPP330P10NM P-CHANNEL MOSFETS 100V IN TO-220 PACKAGE

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IPP330P10NMAKSA1
Discrete Semiconductor Products

IPP330P10NMAKSA1

Active
INFINEON

IPP330P10NM P-CHANNEL MOSFETS 100V IN TO-220 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP330P10NMAKSA1
Current - Continuous Drain (Id) @ 25°C6.9 A, 62 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]236 nC
Input Capacitance (Ciss) (Max) @ Vds11000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)3.8 W, 300 W
Rds On (Max) @ Id, Vgs33 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 62$ 4.86
MouserN/A 1$ 4.75
10$ 4.74
25$ 2.49
100$ 2.31
500$ 1.90
2500$ 1.83
NewarkEach 1$ 4.69
10$ 3.95
25$ 2.63
50$ 2.52
100$ 2.39
250$ 2.18
500$ 1.98

Description

General part information

IPP330P10 Series

OptiMOS™P-channel MOSFETs 100Vin TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.

Documents

Technical documentation and resources