IQD016N08NM5CGATMA1
Active80 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
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IQD016N08NM5CGATMA1
Active80 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
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Technical Specifications
Parameters and characteristics for this part
| Specification | IQD016N08NM5CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 323 A, 31 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 9200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 9-PowerTDFN |
| Power Dissipation (Max) | 333 W |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) @ Id, Vgs | 1.57 mOhm |
| Supplier Device Package | PG-TTFN-9-U02 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 5.77 | |
| 10 | $ 3.88 | |||
| 25 | $ 3.39 | |||
| 100 | $ 2.84 | |||
| 250 | $ 2.57 | |||
| 500 | $ 2.41 | |||
| 1000 | $ 2.28 | |||
| 2500 | $ 2.13 | |||
| Digi-Reel® | 1 | $ 5.77 | ||
| 10 | $ 3.88 | |||
| 25 | $ 3.39 | |||
| 100 | $ 2.84 | |||
| 250 | $ 2.57 | |||
| 500 | $ 2.41 | |||
| 1000 | $ 2.28 | |||
| 2500 | $ 2.13 | |||
| N/A | 4760 | $ 4.16 | ||
| Tape & Reel (TR) | 5000 | $ 2.09 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 4.33 | |
| 10 | $ 3.28 | |||
| 25 | $ 3.02 | |||
| 50 | $ 2.87 | |||
| 100 | $ 2.72 | |||
| 250 | $ 2.59 | |||
| 500 | $ 2.51 | |||
| 1000 | $ 2.43 | |||
Description
General part information
IQD016 Series
The power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm2Source-Downpackage. The part offers a very low RDS(on)of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS, battery-powered applications,battery management, andlow-voltage drives.