Discrete Semiconductor Products

VS-90EPF06L-M3

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DIODE GEN PURP 600V 90A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 90A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-90EPF06L-M3

Current - Average Rectified (Io)	90 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	190 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-90EPF06L-M3	100 µA	600 V	190 ns	1.3 V	200 mA 500 ns	90 A	TO-247AD	Through Hole	Standard	TO-247-2	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 4.63

General part information

Diode 600 V 90A Through Hole TO-247AD

Technical documentation and resources