2EDL8034F5BXUMA1
Active120 V BOOT 4 A HIGH AND LOW SIDE JUNCTION ISOLATED GATE DRIVERS
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2EDL8034F5BXUMA1
Active120 V BOOT 4 A HIGH AND LOW SIDE JUNCTION ISOLATED GATE DRIVERS
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2EDL8034F5BXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 120 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.1 V, 1.9 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) | 3.3 ns, 4.4 ns |
| Supplier Device Package | PG-DSO-8-92 |
| Voltage - Supply [Max] | 17 V |
| Voltage - Supply [Min] | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2EDL803X Series
The 2EDL8034F5B is designed to drive both high and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage & provides 3 A current capability. The high-side bias voltage is generated using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V.
Documents
Technical documentation and resources