Discrete Semiconductor Products

SIR812DP-T1-GE3

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR812DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	335 nC
Input Capacitance (Ciss) (Max)	10240 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	1.45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

Part	Technology	Vgs (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)
Vishay Dale SIR812DP-T1-GE3	MOSFET (Metal Oxide)	20 V	2.3 V	60 A	N-Channel	PowerPAK® SO-8	Surface Mount	10240 pF	PowerPAK® SO-8	10 V	4.5 V	1.45 mOhm	30 V	-55 °C	150 °C	335 nC	6.25 W 104 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources