
Discrete Semiconductor Products
BC847BV,115
NRNDNexperia USA Inc.
TRANS GP BJT NPN 45V 0.1A 300MW 6-PIN SOT-666 T/R
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
BC847BV,115
NRNDNexperia USA Inc.
TRANS GP BJT NPN 45V 0.1A 300MW 6-PIN SOT-666 T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | BC847BV,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-563, SOT-666 |
| Power - Max [Max] | 300 mW |
| Supplier Device Package | SOT-666 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC847BV Series
NPN double transistor in an ultra small SOT666 flat lead plastic package.
Documents
Technical documentation and resources