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BC847BV,115
Discrete Semiconductor Products

BC847BV,115

NRND
Nexperia USA Inc.

TRANS GP BJT NPN 45V 0.1A 300MW 6-PIN SOT-666 T/R

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BC847BV,115
Discrete Semiconductor Products

BC847BV,115

NRND
Nexperia USA Inc.

TRANS GP BJT NPN 45V 0.1A 300MW 6-PIN SOT-666 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationBC847BV,115
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-563, SOT-666
Power - Max [Max]300 mW
Supplier Device PackageSOT-666
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 4000$ 0.07
8000$ 0.06
DigikeyN/A 0$ 0.50

Description

General part information

BC847BV Series

NPN double transistor in an ultra small SOT666 flat lead plastic package.