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TO-220AB PKG
Discrete Semiconductor Products

IRL40B215

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 2.7 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRL40B215

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 2.7 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL40B215
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5225 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)143 W
Rds On (Max) @ Id, Vgs2.7 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
6200$ 0.00
MouserN/A 1$ 2.03
10$ 1.63
100$ 1.37
1000$ 1.31
3000$ 1.11
6000$ 1.08

Description

General part information

IRL40B215 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.