Discrete Semiconductor Products

SIHG73N60AEL-GE3

Obsolete

MOSFET N-CH 600V 69A TO247AC

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 69A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG73N60AEL-GE3

Current - Continuous Drain (Id) (Tc)	69 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	342 nC
Input Capacitance (Ciss) (Max)	6709 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	520 W
Rds On (Max)	42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) (Tc)	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs (Max)	Package Name	Technology	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHG73N60AEL-GE3	600 V	TO-247-3	69 A	Through Hole	4 V	342 nC	10 V	N-Channel	520 W	6709 pF	42 mOhm	30 V	TO-247AC	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 7.17	1m+
	Tube	1	$ 12.17	1m+
		10	$ 10.72

3D models and CAD resources for this part

General part information

N-Channel 600 V 69A (Tc) 520W (Tc) Through Hole TO-247AC

Technical documentation and resources