Discrete Semiconductor Products

2N5551 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 180VCBO 160VCEO 6.0VEBO 600MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 180VCBO 160VCEO 6.0VEBO 600MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N5551 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max)	160 V

Part	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	Power - Max [Max]
Central Semiconductor Corp 2N5551 TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	150 °C	-65 °C	200 mV	TO-92-3	160 V	80	Through Hole	600 mA	50 nA	300 MHz	NPN	625 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92-3

Technical documentation and resources