Discrete Semiconductor Products

SIHF28N60EF-GE3

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MOSFET N-CH 600V 28A TO220

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Discrete Semiconductor Products

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MOSFET N-CH 600V 28A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF28N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	2714 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHF28N60EF-GE3	600 V	120 nC	Through Hole	123 mOhm	2714 pF	TO-220-3 Full Pack	39 W	4 V	10 V	MOSFET (Metal Oxide)	TO-220 Full Pack	28 A	30 V	N-Channel	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 3.11

General part information

N-Channel 600 V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources