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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

IPB100N04S4H2ATMA1

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INFINEON

INFINEON’S IPB100N04S4-H2 OPTIMOS-T2 40V, AEC QUALIFIED, ROHS COMPLIANT, 175°C, LOWEST RDS, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

IPB100N04S4H2ATMA1

Active
INFINEON

INFINEON’S IPB100N04S4-H2 OPTIMOS-T2 40V, AEC QUALIFIED, ROHS COMPLIANT, 175°C, LOWEST RDS, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Technical Specifications

Parameters and characteristics for this part

SpecificationIPB100N04S4H2ATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs90 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]7180 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)115 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.4 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V
PartRds On (Max) @ Id, VgsQualificationPower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Operating Temperature [Max]Operating Temperature [Min]TechnologyDrive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Package / CaseGate Charge (Qg) (Max) @ Vgs [Max]Current - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdFET TypeGradeVgs (Max)Supplier Device PackageMounting TypeInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs
3.3 mOhm
AEC-Q101
300 W
5300 pF
175 °C
-55 °C
MOSFET (Metal Oxide)
10 V
40 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
172 nC
100 A
4 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
4.8 mOhm
AEC-Q101
300 W
11570 pF
175 °C
-55 °C
MOSFET (Metal Oxide)
10 V
100 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
176 nC
100 A
4 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
6.5 mOhm
AEC-Q101
300 W
175 °C
-55 °C
MOSFET (Metal Oxide)
4.5 V
10 V
75 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
246 nC
100 A
2 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
5400 pF
4.7 mOhm
AEC-Q101
300 W
175 °C
-55 °C
MOSFET (Metal Oxide)
10 V
55 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
100 A
4 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
5110 pF
170 nC
6.8 mOhm
AEC-Q101
300 W
175 °C
-55 °C
MOSFET (Metal Oxide)
10 V
75 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
200 nC
100 A
4 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
4700 pF
2.4 mOhm
AEC-Q101
115 W
7180 pF
175 °C
-55 °C
MOSFET (Metal Oxide)
10 V
40 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
100 A
4 V
N-Channel
Automotive
20 V
PG-TO263-3-2
Surface Mount
90 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.46
10$ 2.26
100$ 1.58
500$ 1.28
Digi-Reel® 1$ 3.46
10$ 2.26
100$ 1.58
500$ 1.28
N/A 4978$ 1.33
Tape & Reel (TR) 1000$ 1.19
2000$ 1.15
MouserN/A 1$ 1.27
10$ 0.97
100$ 0.88
1000$ 0.84
NewarkEach (Supplied on Cut Tape) 1$ 1.65
10$ 1.20
25$ 1.11
50$ 1.02
100$ 0.93
250$ 0.92
500$ 0.88
1000$ 0.88

Description

General part information

IPB100 Series

N-Channel 40 V 100A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources