Technical Specifications
Parameters and characteristics for this part
| Specification | BAT2402ELSE6327XTSA1 |
|---|---|
| Capacitance @ Vr, F | 0.2 pF, 0.23 pF |
| Current - Max [Max] | 110 mA |
| Diode Type | Schottky - Single |
| Operating Temperature | 150 °C |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0603 Metric |
| Package / Case | 0201 |
| Power Dissipation (Max) [Max] | 100 mW |
| Resistance @ If, F | 10 Ohm |
| Supplier Device Package | PG-TSSLP-2-3, PG-TSSLP-2-1 |
| Voltage - Peak Reverse (Max) [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.50 | |
| 19243 | $ 0.79 | |||
| Tape & Reel (TR) | 15000 | $ 0.48 | ||
Description
General part information
BAT2402 Series
This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 24 GHz.
Documents
Technical documentation and resources