PSMN3R0-30MLC,115

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MOSFET N-CH 30V 70A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 30V 70A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R0-30MLC,115

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34.8 nC
Input Capacitance (Ciss) (Max) @ Vds	2330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	3.15 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PSMN3R0-60BS,118	3.2 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	130 nC	306 W	10 V	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 A	D2PAK	Surface Mount	20 V	N-Channel
Freescale Semiconductor - NXP PSMN3R0-30MLC,115	3.15 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)		88 W	4.5 V 10 V	30 V		70 A	LFPAK33	Surface Mount	20 V	N-Channel	34.8 nC	2.15 V	2330 pF

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General part information

N-Channel 30 V 70A (Tc) 88W (Tc) Surface Mount LFPAK33

Technical documentation and resources