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PG-TO220-FP

Discrete Semiconductor Products

IPAW60R600P7SE8228XKSA1

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MOSFET N-CH 600V 6A TO220

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DocumentsIPAW60R600P7SE8228XKSA1 | Datasheet

PG-TO220-FP

Discrete Semiconductor Products

IPAW60R600P7SE8228XKSA1

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MOSFET N-CH 600V 6A TO220

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DocumentsIPAW60R600P7SE8228XKSA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPAW60R600P7SE8228XKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	21 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.52
	Tube	450	$ 0.52

Description

General part information

IPAW60 Series

N-Channel 600 V 6A (Tc) 21W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources

IPAW60R600P7SE8228XKSA1 | Datasheet

IPAW60 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPAW60R360P7SE8228XKSA1	MOSFET (Metal Oxide)	360 mOhm	555 pF	TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	22 W	600 V	Through Hole	-40 °C	150 °C	9 A	13 nC	4 V	20 V
INFINEON IPAW60R180P7SXKSA1	MOSFET (Metal Oxide)	180 mOhm	1081 pF	TO-220-3 Full Pack	N-Channel	10 V	PG-TO220 Full Pack	26 W	650 V	Through Hole	-55 °C	150 °C	18 A		4 V	20 V	25 nC
INFINEON IPAW60R600P7SE8228XKSA1	MOSFET (Metal Oxide)	600 mOhm		TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	21 W	600 V	Through Hole	-40 °C	150 °C	6 A		4 V	20 V	9 nC	363 pF
INFINEON IPAW60R280P7SXKSA1	MOSFET (Metal Oxide)	280 mOhm		TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	24 W	600 V	Through Hole	-40 °C	150 °C	12 A	18 nC	4 V	20 V
INFINEON IPAW60R380CEXKSA1	MOSFET (Metal Oxide)		700 pF	TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	31 W	600 V	Through Hole	-40 °C	150 °C	15 A	32 nC	3.5 V	20 V			380 mOhm
INFINEON IPAW60R190CEXKSA1	MOSFET (Metal Oxide)	190 mOhm	1400 pF	TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	34 W	600 V	Through Hole	-40 °C	150 °C	26.7 A		3.5 V	20 V	63 nC
INFINEON IPAW60R600P7SXKSA1	MOSFET (Metal Oxide)	600 mOhm		TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	21 W	600 V	Through Hole	-40 °C	150 °C	6 A		4 V	20 V	9 nC	363 pF
INFINEON IPAW60R280P7SE8228XKSA1	MOSFET (Metal Oxide)	280 mOhm		TO-220-3 Full Pack	N-Channel	10 V	PG-TO220-FP	24 W	600 V	Through Hole	-40 °C	150 °C	12 A	18 nC	4 V	20 V
INFINEON IPAW60R280CEXKSA1	MOSFET (Metal Oxide)	280 mOhm		TO-220-3 Full Pack Variant	N-Channel	10 V	PG-TO220 Full Pack Wide Creepage	32 W	600 V	Through Hole	-40 °C	150 °C	19.3 A		3.5 V	20 V	43 nC	950 pF