Discrete Semiconductor Products

MCU30P06Y-TP

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P-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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P-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU30P06Y-TP

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	72 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs
MCC (Micro Commercial Components) MCU30P06Y-TP	P-Channel	4.5 V 10 V	30 A	MOSFET (Metal Oxide)	72 W	1050 pF	TO-252 (DPAK)	2.7 V	150 °C	-55 °C	60 V	Surface Mount	19.3 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	55 mOhm
MCC (Micro Commercial Components) MCU30P06Y-TP	P-Channel	4.5 V 10 V	30 A	MOSFET (Metal Oxide)	72 W	1050 pF	TO-252 (DPAK)	2.7 V	150 °C	-55 °C	60 V	Surface Mount	19.3 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	55 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 30A 72W (Tj) Surface Mount TO-252 (DPAK)

Technical documentation and resources