Discrete Semiconductor Products

ES3BHE3_A/H

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DIODE GEN PURP 100V 3A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	ES3BHE3_A/H

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AB, SMC
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	0.9 V

super fast rectifier

Part	Speed	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Qualification	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Grade	Package / Case
Vishay General Semiconductor - Diodes Division ES3BHE3_A/I	200 mA 500 ns	DO-214AB (SMC)	45 pF	100 V	0.9 V	Surface Mount	Standard	30 ns	3 A	10 µA	AEC-Q101	-55 °C	150 °C	Automotive	DO-214AB SMC
Vishay General Semiconductor - Diodes Division ES3BHE3_A/H	200 mA 500 ns	DO-214AB (SMC)	45 pF	100 V	0.9 V	Surface Mount	Standard	30 ns	3 A	10 µA	AEC-Q101	-55 °C	150 °C	Automotive	DO-214AB SMC

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General part information

super fast rectifier

Technical documentation and resources