Discrete Semiconductor Products

IPB110N06L G

Obsolete

MOSFET N-CH 60V 78A TO-263

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 78A TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	IPB110N06L G

Current - Continuous Drain (Id) @ 25°C	78 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2700 pF
Mounting Type	Surface Mount
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs [Max]	11 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPB110N06L G	78 A	2 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	79 nC	N-Channel	PG-TO263-3-2	11 mOhm	MOSFET (Metal Oxide)	60 V	2700 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 78A (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources