Discrete Semiconductor Products

IPP17N25S3100AKSA1

Obsolete

TRANSISTOR: N-MOSFET; OPTIMOS™ T; UNIPOLAR; 250V; 13.3A; IDM: 68A

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANSISTOR: N-MOSFET; OPTIMOS™ T; UNIPOLAR; 250V; 13.3A; IDM: 68A

Technical Specifications

Parameters and characteristics for this part

Specification	IPP17N25S3100AKSA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Supplier Device Package	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Qualification	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Grade	Mounting Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IPP17N25S3100AKSA1	20 V	PG-TO220-3-1	TO-220-3	N-Channel	1500 pF	19 nC	AEC-Q101	100 mOhm	MOSFET (Metal Oxide)	10 V	4 V	250 V	175 °C	-55 °C	107 W	Automotive	Through Hole	17 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 17A (Tc) 107W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available