Discrete Semiconductor Products

SIHP5N50D-GE3

LTB

MOSFET N-CH 500V 5.3A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 5.3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP5N50D-GE3

Current - Continuous Drain (Id) (Tc)	5.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	325 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	104 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)
Vishay Dale SIHP5N50D-GE3	5 V	500 V	TO-220-3	104 W	325 pF	20 nC	Through Hole	TO-220AB	N-Channel	5.3 A	1.5 Ohm	-55 °C	150 °C	10 V	MOSFET (Metal Oxide)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
	Tube	1	$ 1.17	1m+
		10	$ 0.74
		100	$ 0.50
		500	$ 0.40

3D models and CAD resources for this part

General part information

N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB

Technical documentation and resources