Specification	SSM5N15FE(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	7.8 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-553
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	ESV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

SSM5N15FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-553(ESV)

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM5N15FE(TE85L,F)	4 V	2.5 V	N-Channel	ESV	150 mW	MOSFET (Metal Oxide)	30 V	150 °C	7.8 pF	20 V	100 mA	SOT-553	Surface Mount	4 Ohm	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-553(ESV)

Technical documentation and resources