Discrete Semiconductor Products

MCACD20N10Y-TP

Active

MOSFET 2N-CH 100V 20A 8DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 100V 20A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	MCACD20N10Y-TP

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1051 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	8-PowerVDFN
Power - Max [Max]	17 W
Supplier Device Package	DFN5060-8D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
MCC (Micro Commercial Components) MCACD20N10Y-TP	100 V	17 W	1051 pF	MOSFET (Metal Oxide)	20 A	Surface Mount	-55 C	150 °C	8-PowerVDFN	2.5 V	2 N-Channel	DFN5060-8D	16 nC
MCC (Micro Commercial Components) MCACD20N10Y-TP	100 V	17 W	1051 pF	MOSFET (Metal Oxide)	20 A	Surface Mount	-55 C	150 °C	8-PowerVDFN	2.5 V	2 N-Channel (Dual)	DFN5060-8D	16 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 100V 20A 17W Surface Mount DFN5060-8D

Technical documentation and resources