Discrete Semiconductor Products

SQJA46EP-T2_GE3

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MOSFET N-CH 40V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJA46EP-T2_GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Grade	Package / Case
Vishay General Semiconductor - Diodes Division SQJA46EP-T2_GE3	5000 pF	PowerPAK® SO-8	10 V	20 V	3.5 V	60 A	40 V	AEC-Q101	-55 °C	175 ░C	68 W	105 nC	N-Channel	Surface Mount	3 mOhm	MOSFET (Metal Oxide)	Automotive	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SQJA46EP-T1_GE3	5000 pF	PowerPAK® SO-8	10 V	20 V	3.5 V	60 A	40 V	AEC-Q101	-55 °C	175 ░C	68 W	105 nC	N-Channel	Surface Mount	3 mOhm	MOSFET (Metal Oxide)	Automotive	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources