Discrete Semiconductor Products

SDURD1030

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DIODE GEN PURP 300V DPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 300V DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SDURD1030

Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Diode Configuration	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]
SMC Diode Solutions SDURD1030CT	1.3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 Pair Common Cathode	30 µA	Standard	300 V	DPAK	Surface Mount	-55 °C	150 °C	200 mA 500 ns	35 ns
SMC Diode Solutions SDURD1030		DPAK (2 Leads + Tab) SC-63 TO-252-3		30 µA	Standard	300 V	DPAK	Surface Mount	-55 °C	150 °C	200 mA 500 ns	35 ns	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V Surface Mount DPAK

Technical documentation and resources