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littelfuse-power-semiconductor_Y4-M6_YD_X126c
Discrete Semiconductor Products

MEE250-12DA

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LITTELFUSE

DIODE MODULE GP 1200V 260A Y4-M6

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littelfuse-power-semiconductor_Y4-M6_YD_X126c
Discrete Semiconductor Products

MEE250-12DA

Active
LITTELFUSE

DIODE MODULE GP 1200V 260A Y4-M6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMEE250-12DA
Current - Average Rectified (Io) (per Diode)260 A
Current - Reverse Leakage @ Vr1200 V, 12 mA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseY4-M6
Reverse Recovery Time (trr)500 ns
Speed500 ns, 200 mA
Supplier Device PackageY4-M6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBox 1$ 78.761m+
12$ 71.38
102$ 63.99
N/A 84$ 77.571m+

Description

General part information

MEE250-12DA Series

The Fast Dual Diode series offers various packages and breakdown voltages up to 1200V. Utilizing FRED dies enables fast reverse recovery capabilities.

Documents

Technical documentation and resources