Discrete Semiconductor Products

MIW75N65F-BP

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IGBT TRENCH FS 650V 75A TO-247-3

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Discrete Semiconductor Products

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IGBT TRENCH FS 650V 75A TO-247-3

Technical Specifications

Parameters and characteristics for this part

Specification	MIW75N65F-BP

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	130 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	395 W
Supplier Device Package	TO-247-3
Switching Energy	920 µJ, 2.64 mJ
Td (on/off) @ 25°C	34 ns, 183 ns
Test Condition	75 A, 8 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Supplier Device Package	Mounting Type	Package / Case	Gate Charge	IGBT Type	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Test Condition	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]
MCC (Micro Commercial Components) MIW75N65F-BP	650 V	2.64 mJ 920 µJ	TO-247-3	Through Hole	TO-247-3	130 nC	Trench Field Stop	300 A	75 A	34 ns 183 ns	1.95 V	8 Ohm 15 V 75 A 400 V	175 °C	-40 °C	395 W
MCC (Micro Commercial Components) MIW75N65F-BP	650 V	2.64 mJ 920 µJ	TO-247-3	Through Hole	TO-247-3	130 nC	Trench Field Stop	300 A	75 A	34 ns 183 ns	1.95 V	8 Ohm 15 V 75 A 400 V	175 °C	-40 °C	395 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 75 A 395 W Through Hole TO-247-3

Technical documentation and resources