Discrete Semiconductor Products

IPP80CN10NGHKSA1

Obsolete

MOSFET N-CH 100V 13A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 13A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80CN10NGHKSA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	716 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IPP80CN10NGHKSA1	PG-TO220-3	4 V	31 W	MOSFET (Metal Oxide)	10 V	13 A	100 V	20 V	80 mOhm	TO-220-3	11 nC	716 pF	N-Channel	Through Hole	175 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3

Technical documentation and resources