IQE046N08LM5ATMA1
ActiveOPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 80 V 4.6 MOHM 100 A, IN A PQFN 3.3X3.3 PACKAGE
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IQE046N08LM5ATMA1
ActiveOPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 80 V 4.6 MOHM 100 A, IN A PQFN 3.3X3.3 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IQE046N08LM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 99 A, 15.6 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 100 W |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | PG-TSON-8-5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IQE046N08 Series
IQE046N08LM5 is Infineon’s new best-in-classOptiMOS™ 5power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C and superior thermal performance. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE046N08LM5 is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.
Documents
Technical documentation and resources