Discrete Semiconductor Products

SI7223DN-T1-GE3

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MOSFET 2P-CH 30V 6A PPAK 1212

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Discrete Semiconductor Products

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MOSFET 2P-CH 30V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7223DN-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max	2.6 W, 23 W
Rds On (Max) @ Id, Vgs	26.4 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Vgs(th) (Max) @ Id	Power - Max	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI7223DN-T1-GE3	1425 pF	40 nC	Surface Mount	PowerPAK® 1212-8 Dual	30 V	6 A	2 P-Channel	PowerPAK® 1212-8 Dual	2.5 V	2.6 W 23 W	26.4 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources