Discrete Semiconductor Products

SMA6511

Obsolete

TRANS 4NPN/1PNP DARL 60V 12SIP

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Discrete Semiconductor Products

Obsolete

TRANS 4NPN/1PNP DARL 60V 12SIP

Technical Specifications

Parameters and characteristics for this part

Specification	SMA6511

Current - Collector (Ic) (Max)	3 A, 1.5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	12-SIP
Power - Max [Max]	4 W
Supplier Device Package	12-SIP
Transistor Type	1 PNP Darlington, 4 NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max)	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Sanken Electric USA Inc. SMA6511	150 °C	2000 hFE	Through Hole	4 W	60 V	1 PNP Darlington 4 NPN	1.5 V	12-SIP	1.5 A 3 A	12-SIP	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor Array 4 NPN, 1 PNP Darlington 60V 1.5A, 3A 4W Through Hole 12-SIP

Technical documentation and resources